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| IGBT MODULE CIRCUIT Single 200A 1200V OUTLINE DRAWING PHMB200B12 Dimension(mm) MAXMUM RATINGS (Tc=25C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Approximate Weight : 500g Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR M4 M6 PHMB200B12 1200 +/ - 20 200 400 960 -40 to +150 -40 to +125 2500 3 1.4 3 Unit V V A W C C V N*m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=200A,VGE=15V VCE=5V,IC=200mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 3 ohm RG= 2 ohm VGE= +/- 15V Min. 4.0 - Typ. 1.9 16600 0.25 0.40 0.25 0.80 Max. 4.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 Unit mA A V V pF s FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 200 400 Unit A Typ. 1.9 0.2 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=200A,VGE=0V IF=200A,VGE=-10V,di/dt=400A/s Min. - Max. 2.4 0.3 Unit V s Unit C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.125 0.24 PHMB200B12 Fig.1- Output Characteristics (Typical) 400 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 16 TC=25 IC=100A 400A VGE=20V 15V 12V 10V Collector to Emitter Voltage V CE (V) 14 12 10 8 6 4 2 0 200A Collector Current I C (A) 300 9V 200 8V 100 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) Gate to Emitter Voltage VGE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 800 700 600 500 400 16 TC=125 IC=100A 400A Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 14 RL=3 TC=25 14 Gate to Emitter Voltage VGE (V) 200A 12 10 8 6 4 2 0 12 10 8 VCE=600V 300 6 400V 200 100 0 0 300 600 900 1200 200V 4 2 0 1500 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 100000 50000 20000 Fig.6- Collector Current vs. Switching Time (Typical) 1.4 1.2 VGE=0V f=1MHZ TC=25 Cies VCC=600V RG= 2.0 VGE=15V TC=25 Switching Time t (s) Capacitance C (pF) 1 0.8 0.6 0.4 0.2 0 10000 5000 2000 1000 500 tOFF Coes tf Cres 200 100 0.1 0.2 0.5 1 2 5 10 20 50 100 200 tON tr 0 50 100 150 200 Collector to Emitter Voltage VCE (V) Collector Current IC (A) PHMB200B12 Fig.7- Series Gate Impedance vs. Switching Time (Typical) 10 5 400 Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) TC=25 TC=125 VCC=600V IC=200A VGE=15V TC=25 toff ton Switching Time t (s) 2 1 0.5 Forward Current I F (A) tr 300 200 tf 0.2 0.1 0.05 100 1 2 5 10 20 50 100 200 0 0 1 2 3 4 Series Gate Impedance RG () Forward Voltage VF (V) Fig.9- Reverse Recovery Characteristics (Typical) 1000 1000 Fig.10- Reverse Bias Safe Operating Area (Typical) 500 200 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 500 IF=200A TC=25 RG=2 VGE=15V TC125 200 100 50 Collector Current I C (A) 200 400 600 800 1000 1200 100 50 20 10 5 2 1 0.5 0.2 trr 20 IRrM 10 5 0 0.1 0 400 800 1200 1600 -di/dt (A/s) Collector to Emitter Voltage V CE (V) Fig.11- Transient Thermal Impedance 1 (/W) 5x10 -1 2x10 -1 FRD IGBT (J-C) 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 2x10 -3 1x10 -3 5x10 -4 10 -5 10 -4 10 -3 10 -2 10 -1 Transient Thermal Impedance Rth TC=25 1 Shot Pulse 1 10 1 Time t (s) |
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